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SAMSUNG 990 EVO Plus Internal SSD, 2TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S2T0BW - Image 1
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SAMSUNG 990 EVO Plus Internal SSD, 2TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S2T0BW

Brand: Samsung|Category: Internal SSD|SKU: 10742|Model: MZ-V9S2T0BW
AED 1,080.00

  • GROUNDBREAKING READ/WRITE SPEEDS: The 990 EVO Plus features the latest NAND memory, boosting sequential read/write speeds up to 7,250/6,300MB/s*. Ideal for huge file transfers and finishing tasks faster than ever.

  • LARGE STORAGE CAPACITY: Harness the full power of your drive with Intelligent TurboWrite2.0's enhanced large-file performance.

  • EXCEPTIONAL THERMAL CONTROL: Keep your cool as you work—or play—without worrying about overheating or battery life. The efficiency-boosting nickel-coated controller allows the 990 EVO Plus to utilize less power while achieving similar performance.

Included warranty

1 Year

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Additional Warranty

1

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Product Description

Model Code (Capacity)

MZ-V9S2T0BW (2TB)

General Features

Application

Client PCs

Form Factor

M.2 (2280)

Interface

PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0

Dimension (WxHxD)

80.15 x 22.15 x 2.38mm

Weight

Max 9.0g

Storage Memory

Samsung V-NAND TLC

Controller

Samsung in-house Controller

Cache Memory

HMB (Host Memory Buffer)

Special Features

TRIM Support

Supported

S.M.A.R.T Support

Supported

GC (Garbage Collection)

Auto Garbage Collection Algorithm

Encryption Support

AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive)

WWN Support

Not Supported

Device Sleep Mode Support

Yes

Performance

Sequential Read

Up to 7,250 MB/s

Sequential Write

Up to 6,300 MB/s

Random Read (4KB, QD32)

Up to 1,000,000 IOPS

Random Write (4KB, QD32)

Up to 1,350,000 IOPS

Environment

Average Power Consumption

Read 4.6W / Write 4.2W

Power Consumption (Idle)

Typical 60mW for all capacities

Power Consumption (Sleep)

Typical 5mW for all capacities

Allowable Voltage

3.3V ± 5%

Reliability (MTBF)

1.5 Million Hours

Operating Temperature

0 - 70°C

Shock Resistance

1,500 G & 0.5 ms (Half sine)


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