SAMSUNG 990 EVO Plus Internal SSD, 1TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,150 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S1T0BW
GROUNDBREAKING READ/WRITE SPEEDS: The 990 EVO Plus features the latest NAND memory, boosting sequential read/write speeds up to 7,250/6,300MB/s*. Ideal for huge file transfers and finishing tasks faster than ever.
LARGE STORAGE CAPACITY: Harness the full power of your drive with Intelligent TurboWrite2.0's enhanced large-file performance.
EXCEPTIONAL THERMAL CONTROL: Keep your cool as you work—or play—without worrying about overheating or battery life. The efficiency-boosting nickel-coated controller allows the 990 EVO Plus to utilize less power while achieving similar performance.
Included warranty
1 Year
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Product Description
Form Factor | M.2 (2280) |
Capacity | 1TB |
Interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimensions (WxHxD) | 80.15 x 22.15 x 2.38 mm |
Weight | Max 9.0g |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB (Host Memory Buffer) |
Performance |
|
Sequential Read Speed | Up to 7,150 MB/s |
Sequential Write Speed | Up to 6,300 MB/s |
Random Read (4KB, QD32) | Up to 850,000 IOPS |
Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
Environment |
|
Average Power Consumption | Read 4.3W / Write 4.2W |
Power Consumption (Idle) | Typical 60 mW |
Power Consumption (Sleep) | Typical 5 mW |
Allowable Voltage | 3.3 V ± 5 % |
Reliability (MTBF) | 1.5 Million Hours |
Operating Temperature | 0 - 70 ℃ |
Shock | 1,500 G & 0.5 ms (Half sine) |
Special Features |
|
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit, TCG/Opal, IEEE1667 |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |